P-N OʻTISHLI YARIMOʻTKAZGICHLARNING VOLT-AMPER XARAKTERISTIKALARIGA MAGNIT MAYDONNING TA’SIRI
Keywords:
Ideal xolatda diodning volt amper xarakteristikasiga bazadagi qarshilik va magnit maydonini ta’sirini xisobga olganimizda quyidagicha formula xosil boʻladiAbstract
Bugungi kunda elektrotexnika va elektronika sohasi rivojlanib borgani sari yarimotkazgichli asboblarni yanada takomillashtirish, ularning tashqi ta’sirlarga sezgirligi va turli maydonlarning ularning xarakteristikalariga ta’sirini oʻrganish axamiyatli xisoblanadi. Bu ishda biz p-n oʻtishli diodning volt-amper xarakteristikalari (VAX)ga magnit maydonning ta’sirini koʻrib chiqamiz.
References
Arjvadhara.P.Ali, S.M.Chitralekha.J., “ Analysis of solar PV cell performance with сhanging irradiance and temperature”, Int.J.Eng.Comput. Sci 2, 214-220, 2013
J. Chen, X Zhang, Z. Luo, J. Wang, H-G Piao “Large positive magnetoresistance in germanium”, People’s Republic of China [http://dx.doi.org/10.1063/1.4896173]“INTERNATIONAL СONFERENCE ON LEARNING AND TEACHING” 2022/8346
Singh.P,Ravindra.N.M, “Temperature dependence of solar cell performance – an analysis”, Sol.Energy Mater. Sol.Cells 101,36-45, 2012
В.Л.Бонч-Бруевич, С.Г.Калашников «Физика полупроводников», Наука, М.1977.
G.Gulyamov, A.G.Gulyamov. “On the tensovensitivity of p-n junction under illuminatian”, Semiconductors,2015,vol.49, pp 819-822
Downloads
Published
How to Cite
Issue
Section
License
This work is licensed under a Creative Commons Attribution-ShareAlike 4.0 International License.